دیتاشیت BCP55

BCP55

مشخصات دیتاشیت

نام دیتاشیت BCP55
حجم فایل 170.436 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت BCP55

BCP55 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. BCP55
  • Transistor Type: NPN
  • Operating Temperature: -
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 1.5W
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-223-4
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
  • Base Part Number: BCP55
  • detail: Bipolar (BJT) Transistor NPN 60V 1.5A 1.5W Surface Mount SOT-223-4

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